02285nam 2200565 450 991078815800332120230808211335.00-8261-1992-1(CKB)2670000000599128(OCoLC)905918259(CaPaEBR)ebrary11025756(SSID)ssj0001441367(PQKBManifestationID)12477232(PQKBTitleCode)TC0001441367(PQKBWorkID)11412075(PQKB)10913954(MiAaPQ)EBC2166643(Au-PeEL)EBL2166643(CaPaEBR)ebr11025756(CaONFJC)MIL734321(OCoLC)907294098(EXLCZ)99267000000059912820150311h20162016 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierWriting for publication in nursing /Marilyn H. Oermann, PhD, RN, ANEF, FAAN, Judith C. Hays, PhD, RN, FGSAThird edition.New York, New York :Springer Publishing Company,2016.©20161 online resource (xv, 416 pages) illustrationsBibliographic Level Mode of Issuance: Monograph.0-8261-1991-3 1-336-03035-6 Includes bibliographical references at the end of each chapters and index.Getting started -- Selecting a journal -- Authorship and preparing to write -- Reviewing the literature -- Writing research articles -- Review and evidence-based practice articles -- Articles reporting quality improvement studies -- Clinical practice articles -- Other types of writing -- Books and book chapters -- Writing process -- References -- Tables and figures -- Final paper and submission to journal -- Editorial review process -- Publishing process -- Open access and web publications.JournalismObjectiveNursingJournalismObjectiveNursing.808/.06661Oermann Marilyn H.976257Hays Judith C.MiAaPQMiAaPQMiAaPQBOOK9910788158003321Writing for publication in nursing3709625UNINA05173nam 2200721 450 991082264470332120230725033632.03-03813-615-8(CKB)2670000000230089(EBL)1872628(SSID)ssj0000760518(PQKBManifestationID)11517384(PQKBTitleCode)TC0000760518(PQKBWorkID)10714821(PQKB)11295468(Au-PeEL)EBL1872628(CaPaEBR)ebr10817963(OCoLC)874968182(MiAaPQ)EBC1872628(EXLCZ)99267000000023008920121009h20112011 uy| 0engur|n|---|||||txtccrNanoscaled semiconductor-on-insulator materials, sensors and devices selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /edited by Alexei N. Nazarov and Jean-Pierre RaskinDurnten-Zurich, Switzerland :Trans Tech Publications,[2011]Enfield, N.H. :Distributed in the Americas by Trans Tech Publications,[date of distribution not identified]©20111 online resource (199 p.)Advanced materials research,1022-6680 ;volume 276Description based upon print version of record.3-03785-178-3 Includes bibliographical references and indexes.Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI DevicesGate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMSPolysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX LayersInterface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors IndexThis special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielAdvanced materials research ;276.SemiconductorsCongressesSilicon-on-insulator technologyCongressesNanoelectromechanical systemsCongressesNanotechnologyCongressesNanoscaledSemiconductor-on-insulatorSensorsInsulatorSemiconductorsSilicon-on-insulator technologyNanoelectromechanical systemsNanotechnology621.38152Nazarov A. N(Alexei N.)1632823Raskin J.-P(Jean-Pierre),1971-1651376MiAaPQMiAaPQMiAaPQBOOK9910822644703321Nanoscaled semiconductor-on-insulator materials, sensors and devices4001280UNINA