02001nam 2200445 450 991082245460332120230803211655.03-8325-9666-6(CKB)4340000000242940(MiAaPQ)EBC5223913(Au-PeEL)EBL5223913(CaPaEBR)ebr11539620(OCoLC)102180928958a1c68a-1ff0-4d36-a021-3edeb0dd2d03(EXLCZ)99434000000024294020180524d2014 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierLeakage current and defect characterization of short channel MOSFETs /Guntrade RollBerlin :Logos Verlag Berlin,[2014]©20141 online resource (242 pages)Research at NaMLab ;2PublicationDate: 201211303-8325-3261-7 Long description: The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.Metal oxide semiconductor field-effect transistorsMetal oxide semiconductor field-effect transistors.621.3815284Roll Guntrade1601878MiAaPQMiAaPQMiAaPQBOOK9910822454603321Leakage current and defect characterization of short channel MOSFETs3925661UNINA