03566nam 2200661Ia 450 991081489670332120200520144314.01-281-12124-X9786611121242981-270-685-2(CKB)1000000000334173(EBL)312269(OCoLC)476099323(SSID)ssj0000948680(PQKBManifestationID)11484554(PQKBTitleCode)TC0000948680(PQKBWorkID)10951193(PQKB)11348985(MiAaPQ)EBC312269(WSP)00006311(Au-PeEL)EBL312269(CaPaEBR)ebr10188789(CaONFJC)MIL112124(EXLCZ)99100000000033417320060911d2007 uy 0engur|n|---|||||txtccrSiC materials and devices /edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein1st ed.New Jersey ;London World Scientific20071 online resource (143 p.)Selected topics in electronics and systems ;43SiC materials and devices ;2Description based upon print version of record.981-270-383-7 Includes bibliographical references.Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; ReferencesSilicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growthSelected topics in electronics and systems ;v. 40.Silicon carbideElectric propertiesSemiconductorsSilicon carbideElectric properties.Semiconductors.621.38152Shur Michael770441Rumyantsev Sergey1753574Levinshtein M. E(Mikhail Efimovich)0MiAaPQMiAaPQMiAaPQBOOK9910814896703321SiC materials and devices4189478UNINA