03845nam 2200673Ia 450 991081460480332120240416102457.01-281-12088-X9786611120887981-270-758-1(CKB)1000000000334209(EBL)312290(OCoLC)476099467(SSID)ssj0000205772(PQKBManifestationID)11217681(PQKBTitleCode)TC0000205772(PQKBWorkID)10193133(PQKB)10746105(WSP)00006157(Au-PeEL)EBL312290(CaPaEBR)ebr10188741(CaONFJC)MIL112088(OCoLC)173612115(MiAaPQ)EBC312290(EXLCZ)99100000000033420920070503d2007 uy 0engur|n|---|||||txtccrMosfet modeling for VLSI simulation theory and practice /Narain Arora1st ed.Singapore World Scientificc20071 online resource (633 p.)International series on advances in solid state electronics and technologyDescription based upon print version of record.981-320-330-7 981-256-862-X Includes bibliographical references and index.Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300KAppendix B. Some Important Physical Constants at 300 KAppendix C. Unit Conversion Factors; Appendix D. Magnitude Prefixes; Appendix E. Methods of Calculating s from the Implicit Eq. (6.23) or (6.30); Appendix F. Charge Based MOSFET Intrinsic Capacitances; Appendix G. Linear Regression; Appendix H. Basic Statistical and Probability Theory; Appendix I. List of Widely Used Statistical Package Programs; 862-X1-missing.pdf; Subject IndexA reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required International series on advances in solid state electronics and technology.Metal oxide semiconductor field-effect transistorsIntegrated circuitsVery large scale integrationIntegrated circuitsVery large scale integrationComputer simulationMetal oxide semiconductor field-effect transistors.Integrated circuitsVery large scale integration.Integrated circuitsVery large scale integrationComputer simulation.621.395Arora N(Narain),1943-1628034MiAaPQMiAaPQMiAaPQBOOK9910814604803321Mosfet modeling for VLSI simulation3964903UNINA