01457nam 2200397 450 991079494270332120230808205703.03-7369-8287-9(CKB)4340000000199944(MiAaPQ)EBC5022000(EXLCZ)99434000000019994420170929h20162016 uy 0engurcnu||||||||rdacontentrdamediardacarrierIndium phosphide HBT in thermally optimized periphery for applications up to 300 GHz /vorgelegt von M. Eng. and Tech. Ksenia Nosaeva1. Auflage.Gottingen, [Germany] :Cuvillier Verlag,2016.©20161 online resource (155 pages) illustrations (some color), tables, graphsInnovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik ;Band 363-7369-9287-4 Includes bibliographical references.Modulation-doped field-effect transistorsModulation-doped field-effect transistors.621.3815284Nosaeva Ksenia1506513MiAaPQMiAaPQMiAaPQBOOK9910794942703321Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz3736790UNINA