02227nam 22005411 450 991078763380332120200520144314.01-60805-792-5(CKB)2670000000493937(EBL)1572233(SSID)ssj0001363004(PQKBManifestationID)11831752(PQKBTitleCode)TC0001363004(PQKBWorkID)11371852(PQKB)10710733(MiAaPQ)EBC1572233(Au-PeEL)EBL1572233(CaPaEBR)ebr10817749(OCoLC)865331807(EXLCZ)99267000000049393720121011d2013 uy 1engur|n|---|||||txtccrIon implantation and activationVolume 3 /Kunihiro SuzukiSharjah :Bentham Science Publishers,2013.1 online resource (212 p.)Ion Implantation and ActivationDescription based upon print version of record.1-60805-793-3 Includes bibliographical references and index.Cover; Title; EUL; Contents; Preface; Acknowledgement; Chapter 01; Chapter 02; Chapter 03; Chapter 04; Chapter 05; Chapter 06; Chapter 07; IndexIon Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories.Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling.Ion Implantation and ActivationIon implantationIon acceleratorsIon implantation.Ion accelerators.Suzuki Kunihiro1473061MiAaPQMiAaPQMiAaPQBOOK9910787633803321Ion implantation and activation3686112UNINA