04285nam 2200649Ia 450 991078591060332120200520144314.01-283-73426-50-12-391859-6(CKB)2670000000274757(EBL)1058148(OCoLC)818819266(SSID)ssj0000756379(PQKBManifestationID)12297244(PQKBTitleCode)TC0000756379(PQKBWorkID)10750400(PQKB)10645389(Au-PeEL)EBL1058148(CaPaEBR)ebr10621135(CaONFJC)MIL404676(MiAaPQ)EBC1058148(PPN)170607127(EXLCZ)99267000000027475720120924d2012 uy 0engur|n|---|||||txtccrMolecular beam epitaxy[electronic resource] from research to mass production /edited by Mohamed HeniniAmsterdam Elsevierc20121 online resource (745 p.)Description based upon print version of record.0-12-812137-8 0-12-387839-X Includes bibliographical references and index.Front Cover; Molecular Beam Epitaxy: From research to mass production; Copyright; Contents; Preface; Contributors; Chapter 1 - Molecular beam epitaxy: fundamentals, historical background and future prospects; 1.1 INTRODUCTION; 1.2 BASICS OF MBE; 1.3 THE TECHNOLOGY OF MBE; 1.4 DIAGNOSTIC TECHNIQUES AVAILABLE IN MBE SYSTEMS; 1.5 THE PHYSICS OF MBE; 1.6 HISTORICAL BACKGROUND; 1.7 FUTURE PROSPECTS; 1.8 CONCLUSIONS; REFERENCES; Chapter 2 - Molecular beam epitaxy in the ultra-vacuum of space: present and near future; 2.1 INTRODUCTION; 2.2 WAKE SHIELD FACILITY; 2.3 SHIELD; 2.4 CURRENT STATUS2.5 CONCLUSIONSREFERENCES; Chapter 3 - Growth of semiconductor nanowires by molecular beam epitaxy; 3.1 INTRODUCTION; 3.2 NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY: AN OVERVIEW; 3.3 GROWTH DYNAMICS: MODELS AND EXPERIMENTAL STUDIES; 3.4 CHARACTERISATION AND STRUCTURAL COMPLEXITY; 3.5 OPTICAL PROPERTIES; 3.6 MBE-GROWN NANOWIRE DEVICES: FROM FUNDAMENTALS TO APPLICATIONS; 3.7 CONCLUSIONS; REFERENCES; Chapter 4 - Droplet epitaxy of nanostructures; 4.1 INTRODUCTION; 4.2 DROPLET EPITAXY; 4.3 DROPLET DEPOSITION; 4.4 NANOSTRUCTURE FORMATION; 4.5 CAPPING AND POST-GROWTH ANNEALING PROCEDURES4.6 PULSED DROPLET EPITAXYACKNOWLEDGEMENTS; REFERENCES; Chapter 5 - Migration-enhanced epitaxy for low-dimensional structures; 5.1 INTRODUCTION; 5.2 AREA SELECTIVE EPITAXY BY MEE; 5.3 POLAR DIAGRAM OF THE GROWTH RATE OF III-V COMPOUND SEMICONDUCTORS; 5.4 FORMATION OF CRYSTAL FACETS AT THE BOUNDARIES OF MICROSTRUCTURES; 5.5 AREA SELECTIVE GROWTH ON (001) GAAS SUBSTRATE BY MEE USING AS4 AND AS2; 5.6 AREA SELECTIVE GROWTH ON (111)B GAAS SUBSTRATE BY MEE; 5.7 SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; Chapter 6 - MBE growth of high-mobility 2DEG; 6.1 INTRODUCTION; 6.2 HIGH-MOBILITY MBE SYSTEMChapter 10 - Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype deviMolecular beam epitaxyOptoelectronic devicesMaterialsSemiconductorsMaterialsMolecular beam epitaxy.Optoelectronic devicesMaterials.SemiconductorsMaterials.621.3815621.38152Henini Mohamed1500604MiAaPQMiAaPQMiAaPQBOOK9910785910603321Molecular beam epitaxy3782342UNINA