02202nam 2200553 a 450 991078508070332120230617001535.0981-277-452-1(CKB)1000000000410906(DLC)2006283987(StDuBDS)AH24684526(SSID)ssj0000245990(PQKBManifestationID)11238393(PQKBTitleCode)TC0000245990(PQKBWorkID)10180638(PQKB)11208010(MiAaPQ)EBC1681716(WSP)00005986(Au-PeEL)EBL1681716(CaPaEBR)ebr10201386(CaONFJC)MIL530328(OCoLC)879074363(EXLCZ)99100000000041090620061005d2005 uy 0engurcn|||||||||txtccrSilicon carbide power devices[electronic resource] /B. Jayant BaligaNew Jersey World Scientificc20051 online resource (xxi, 503 p. )ill. (some col.)Bibliographic Level Mode of Issuance: Monograph981-256-605-8 Includes bibliographical references and index.ch. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis.Silicon carbideElectric propertiesSemiconductorsSilicon carbideElectric properties.Semiconductors.621.3815/2Baliga B. Jayant1948-7722MiAaPQMiAaPQMiAaPQBOOK9910785080703321Silicon carbide power devices3756603UNINA