04003nam 2200685 a 450 991078480700332120230828213054.01-281-37331-19786611373313981-277-337-1(CKB)1000000000407647(EBL)1679458(OCoLC)879074241(SSID)ssj0000245723(PQKBManifestationID)11216245(PQKBTitleCode)TC0000245723(PQKBWorkID)10176988(PQKB)11415028(MiAaPQ)EBC1679458(WSP)00006134(Au-PeEL)EBL1679458(CaPaEBR)ebr10201471(CaONFJC)MIL137331(EXLCZ)99100000000040764720080815d2006 uy 0engurcn|||||||||txtccrSiC materials and devicesVol. 1[electronic resource] /edited by Michael Shur, Sergey Rumyantsev, Michael LevinshteinNew Jersey World Scientific20061 online resource (342 p.)Selected topics in electronics and systems ;v. 40Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner.981-256-835-2 Includes bibliographical references and index.CONTENTS; Preface; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime9 Properties of SiC/SiO2 Interfaces Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts3 Specific Contact Resistance 4 Ohmic Contacts to n-type SiC; 5 Ohmic Contacts to p-type SiC; 6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode1 Introduction 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction2 PiN Rectifier Design and Operation 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions; Acknowledgements; References; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors3 Silicon Carbide VaractorsAfter many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide orSelected topics in electronics and systems ;v. 40.Silicon carbideElectric propertiesSemiconductorsSilicon carbideElectric properties.Semiconductors.621.38152Shur Michael770441Rumyantsev Sergey L1532842Levinshteĭn M. E(Mikhail Efimovich)1501796MiAaPQMiAaPQMiAaPQBOOK9910784807003321SiC materials and devices3779357UNINA