02462nam 2200589Ia 450 991078364110332120230617035121.01-281-88100-79786611881009981-256-932-4(CKB)1000000000247270(EBL)259272(OCoLC)475976090(SSID)ssj0000246007(PQKBManifestationID)11211425(PQKBTitleCode)TC0000246007(PQKBWorkID)10180422(PQKB)10913190(MiAaPQ)EBC259272(WSP)00000725 (Au-PeEL)EBL259272(CaPaEBR)ebr10126001(CaONFJC)MIL188100(OCoLC)935232562(EXLCZ)99100000000024727020050728d2005 uy 0engur|n|---|||||txtccrSilicon RF power MOSFETS[electronic resource] /B. Jayant BaligaSingapore ;Hackensack, NJ World Scientificc20051 online resource (320 p.)Description based upon print version of record.981-256-121-8 Includes bibliographical references and index.Preface; Contents; Chapter 1 Introduction; Chapter 2 RF Power Amplifiers; Chapter 3 MOSFET PHYSICS; Chapter 4 Lateral-Diffused MOSFETs; Chapter 5 Vertical-Diffused MOSFETs; Chapter 6 Charge-Coupled MOSFETs; Chapter 7 Super-Linear MOSFETs; Chapter 8 Planar Super-Linear MOSFETs; Chapter 9 Dual Trench MOSFETs; Chapter 10 Hot Carrier Injection Instability; Chapter 11 Synopsis; Appendix; IndexThe world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even streaming video.Metal oxide semiconductor field-effect transistorsField-effect transistorsMetal oxide semiconductor field-effect transistors.Field-effect transistors.621.3815/284Baliga B. Jayant1948-7722MiAaPQMiAaPQMiAaPQBOOK9910783641103321Silicon RF power MOSFETS3676207UNINA