01155nam0 2200325 450 00000728020060925105634.088-387-3065-220060922d2005----km-y0itay50------baitaITy---j---001yyIstituzioni di diritto internazionale privato e diritto ecclesiasticoAlessandro Bruni, Roberto InnocenziSantarcangelo di Romagna (RN)Maggiolic2005354 p.24 cm<<L' >>esame da avvocatoConcorsi pubbliciEsami & professioni0070.22001<<L'>>esame da avvocato2001Concorsi publiciEsami & professioniDiritto internazionale privatoManualiDiritto ecclesiasticoManuali340.920342.45085220Bruni,Alessandro100675Innocenzi,Roberto598591ITUNIPARTHENOPE20060922RICAUNIMARC000007280G-020238785NAVA32006Istituzioni di diritto internazionale privato e diritto ecclesiastico1205538UNIPARTHENOPE02012nam 2200601 a 450 991077866320332120230421033141.00-309-17605-01-280-19276-397866101927620-309-59653-X0-585-08469-6(CKB)110986584751674(OCoLC)614702456(CaPaEBR)ebrary10056927(SSID)ssj0000198972(PQKBManifestationID)11180609(PQKBTitleCode)TC0000198972(PQKBWorkID)10184299(PQKB)10508762(MiAaPQ)EBC3376651(Au-PeEL)EBL3376651(CaPaEBR)ebr10056927(CaONFJC)MIL19276(OCoLC)923265287(EXLCZ)9911098658475167419950905d1995 uy 0engurcn|||||||||txtccrMaterials for high-temperature semiconductor devices[electronic resource] /Committee on Materials for High-Temperature Semiconductor Devices, National Materials Advisory Board, Commission on Engineering and Technical Systems, National Research CouncilWashington, D.C. National Academy Pressc19951 online resource (135 p.) "NMAB-474."0-309-05335-8 Includes bibliographical references.SemiconductorsMaterials at high temperaturesWide gap semiconductorsSemiconductors.Materials at high temperatures.Wide gap semiconductors.621.381/2National Research Council (U.S.).Committee on Materials for High-Temperature Semiconductor Devices.MiAaPQMiAaPQMiAaPQBOOK9910778663203321Materials for high-temperature semiconductor devices3740794UNINA