04289nam 22009494a 450 991077760560332120230207224823.00-8147-3942-31-4294-1507-X10.18574/9780814739426(CKB)1000000000467174(EBL)865548(OCoLC)782877962(SSID)ssj0000161140(PQKBManifestationID)11163083(PQKBTitleCode)TC0000161140(PQKBWorkID)10190669(PQKB)10819447(MiAaPQ)EBC865548(OCoLC)76964303(MdBmJHUP)muse10749(DE-B1597)548495(DE-B1597)9780814739426(Au-PeEL)EBL865548(CaPaEBR)ebr10137191(EXLCZ)99100000000046717420040610d2005 uy 0engur|n|---|||||txtccrGender myths v. working realities[electronic resource] using social science to reformulate sexual harassment law /Theresa M. BeinerNew York New York University Pressc20051 online resource (273 p.)Description based upon print version of record.0-8147-9917-5 Includes bibliographical references (p. 209-252) and index.Making a more realistic assessment of what is sufficiently severe or pervasive to constitute sexual harassment -- The reasonable woman standard : much ado about nothing? -- The conundrum of "unwelcome" sexual harassment -- Conceptualizing sexual harassment as "because of sex" -- Reality bites the Ellerth/Faragher standard for imputing liability to the employers for supervisor sexual harassment -- Making targets whole and deterring defendants -- The new sexual harassment claim.Both the courts and the public seem confused about sexual harassment—what it is, how it functions, and what sorts of behaviors are actionable in court. Theresa M. Beiner contrasts perspectives from social scientists on the realities of workplace sexual harassment with the current legal standard. When it comes to sexual harassment law, all too often courts (and employers) are left in the difficult position of grappling with vague legal standards and little guidance about what sexual harassment is and what can be done to stop it. Often, courts impose their own stereotyped view of how women and men “ought” to behave in the workplace. This viewpoint, social science reveals, is frequently out of sync with reality.As a legal scholar who takes social science seriously, Beiner provides valuable insight into what behaviors people perceive as sexually harassing, why such behavior can be characterized as discrimination because of sex, and what types of workplaces are more conducive to sexually harassing behavior than others. Throughout, Beiner offers proposals for legal reform with the goal of furthering workplace equality for both men and women.Sexual harassmentLaw and legislationSocial aspectsUnited StatesLaw and the social sciencesUnited StatesBeiner.because.behavior.behaviors.characterized.conducive.discrimination.harassing.insight.into.legal.more.others.people.perceive.provides.scholar.science.seriously.sex.sexually.social.such.takes.than.types.valuable.what.workplaces.Sexual harassmentLaw and legislationSocial aspectsLaw and the social sciences344.7301/4133Beiner Theresa M1485071MiAaPQMiAaPQMiAaPQBOOK9910777605603321Gender myths v. working realities3703994UNINA04279nam 2201165z- 450 991055755330332120210501(CKB)5400000000044073(oapen)https://directory.doabooks.org/handle/20.500.12854/68381(oapen)doab68381(oapen)68381(EXLCZ)99540000000004407320202105d2021 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierNanowire Field-Effect Transistor (FET)Basel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20211 online resource (96 p.)3-03936-208-9 3-03936-209-7 In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.Nanowire Field-Effect Transistor History of engineering and technologybicsscaspect ratio of channel cross-sectioncharge transportCMOS circuitconduction mechanismconstrictionCoulomb interactionDC and AC characteristic fluctuationsdevice simulationdimensionality reductiondrift-diffusionelectron-phonon interactionfabricationfield effect transistorgate-all-aroundgeometric correlationsheat equationhot electronsIII-VIntegrationKubo-Greenwood formalismlowest order approximationmaterial propertiesmetal gatemodellingMonte CarloMOSFETsnano-coolingnano-transistorsnanodevicenanojunctionnanowirenanowire field-effect transistorsnanowire transistornoise margin fluctuationnon-equilibrium Green functionsnonequilibrium Green's functionone-dimensional multi-subband scattering modelsPadé approximantsphonon-phonon interactionpower dissipationpower fluctuationquantum confinementquantum electron transportquantum modelingquantum transportrandom dopantRichardson extrapolationSchrödinger based quantum correctionsschrödinger-poisson solversscreeningself-consistent Born approximationself-coolingsilicon nanomaterialssilicon nanowiresstatistical device simulationstochastic Schrödinger equationsTASEthermoelectricitytiming fluctuationvariabilityvariability effectswork function fluctuationZnOHistory of engineering and technologyGarcía-Loureiro AntonioedtKalna KaroledtSeoane NataliaedtGarcía-Loureiro AntonioothKalna KarolothSeoane NataliaothBOOK9910557553303321Nanowire Field-Effect Transistor (FET)3022684UNINA