00772nam 2200265 450 991098549470332120250318165346.0978-84-204-6186-120250318d21-c----u y0engy50 baspaES 001zyCorrientes alternasantología de verso y prosaOctavio PazCXCVIII, 752 p.21 cmBarcelonaReal Academia Española2024Asociación de Academia de la lengua española864.623itaPaz,Octavio152695UNINAREICATUNIMARCBK9910985494703321864.6 PAZ 022025/407FLFBCFLFBCCorrientes alternas4330755UNINA02195nam 2200457z- 450 991074327050332120230911(CKB)5690000000228603(oapen)doab113953(EXLCZ)99569000000022860320230920c2023uuuu -u- -engurmn|---annantxtrdacontentcrdamediacrrdacarrierRecent Advances in III-Nitride SemiconductorsMDPI - Multidisciplinary Digital Publishing Institute20231 online resource (236 p.)3-0365-8625-3 Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on "Recent Advances in III-Nitride Semiconductors" provides a forum for research monographs and professional titles in this area. The Special Issue presents the joint effort of 16 leading research groups, covering subjects including: the growth of GaN-based materials and micro/nanostructures; characterization of the materials and heterostructures; GaN-based novel devices, including emission, detection and power devices; application and integration of other wide-bandgap materials and novel devices in novel electronics and photonics.History of engineering & technologybicsscTechnology: general issuesbicsscAlGaNelectro-optics devicesepitaxyGaNheterostructuresInGaNmicro-electronics devicesNitridesphotonic crystal and plasmonicsphotonic crystal enhanced light-matter interactionpower devicestunable devicesHistory of engineering & technologyTechnology: general issuesBOOK9910743270503321Recent Advances in III-Nitride Semiconductors3560503UNINA