05369nam 2200661 a 450 991014569520332120170815112747.01-281-32245-897866113224580-470-75181-90-470-75182-7(CKB)1000000000414878(EBL)351354(OCoLC)476171860(SSID)ssj0000224583(PQKBManifestationID)11910944(PQKBTitleCode)TC0000224583(PQKBWorkID)10210608(PQKB)11398961(MiAaPQ)EBC351354(EXLCZ)99100000000041487820071109d2008 uy 0engur|n|---|||||txtccrPorous silicon carbide and gallium nitride[electronic resource] epitaxy, catalysis, and biotechnology applications /Randall M. Feenstra, Colin E.C. WoodChichester, England ;Hoboken, NJ John Wiley & Sonsc20081 online resource (340 p.)Description based upon print version of record.0-470-51752-2 Includes bibliographical references (p. 308-310) and index.Porous Silicon Carbide and Gallium Nitride; Contents; Preface; 1 Porous SiC Preparation, Characterization and Morphology; 1.1 Introduction; 1.2 Triangular Porous Morphology in n-type 4H-SiC; 1.2.1 Crystal Anodization; 1.2.2 Description of the Porous Structure; 1.2.3 Model of the Morphology; 1.3 Nano-columnar Pore Formation in 6H-SiC; 1.3.1 Experimental; 1.3.2 Results; 1.3.3 Discussion; 1.4 Summary; Acknowledgements; References; 2 Processing Porous SiC: Diffusion, Oxidation, Contact Formation; 2.1 Introduction; 2.2 Formation of Porous Layer; 2.3 Diffusion in Porous SiC; 2.4 Oxidation2.5 Contacts to Porous SiCAcknowledgements; References; 3 Growth of SiC on Porous SiC Buffer Layers; 3.1 Introduction; 3.2 SiC CVD Growth; 3.3 Growth of 3C-SiC on Porous Si via Cold-Wall Epitaxy; 3.3.1 Growth on Porous Si Substrates; 3.3.2 Growth on Stabilized Porous Si Substrates; 3.4 Growth of 3C-SiC on Porous 3C-SiC; 3.4.1 Growth in LPCVD Cold-wall Reactor; 3.5 Growth of 4H-SiC on Porous 4H-SiC; 3.6 Conclusion; Acknowledgements; References; 4 Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching; 4.1 Introduction4.2 Creation of Porous GaN by Electroless Etching4.3 Morphology Characterization; 4.3.1 Porous GaN Derived from Unintentionally Doped Films; 4.3.2 Transmission Electron Microscopy (TEM) Characterization; 4.4 Luminescence of Porous GaN; 4.4.1 Cathodoluminescence (CL) of Porous GaN; 4.4.2 Photoluminescence (PL) of Porous GaN; 4.5 Raman Spectroscopy of Porous GaN; 4.5.1 Characteristics of Raman scattering in GaN; 4.5.2 Raman Spectra of Porous GaN Excited Below Band Gap; 4.6 Summary and Conclusions; Acknowledgements; References; 5 Growth of GaN on Porous SiC by Molecular Beam Epitaxy5.1 Introduction5.2 Morphology and Preparation of Porous SiC Substrates; 5.2.1 Porous Substrates; 5.2.2 Hydrogen Etching; 5.3 MBE Growth of GaN on Porous SiC Substrates; 5.3.1 Experimental Details; 5.3.2 Film Structure; 5.3.3 Film Strain; 5.4 Summary; Acknowledgements; References; 6 GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC; 6.1 Introduction; 6.2 Epitaxy of GaN on Porous SiNx Network; 6.2.1 Three-step Growth Method; 6.2.2 Structural and Optical Characterization; 6.2.3 Schottky Diodes (SDs) on Undoped GaN Templates; 6.2.4 Deep Level Transition Spectrum6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN6.3.1 Formation of Porous TiN; 6.3.2 Growth of GaN on Porous TiN; 6.3.3 Characterization by XRD; 6.3.4 Characterization by TEM; 6.3.5 Characterization by PL; 6.4 Growth of GaN on Porous SiC; 6.4.1 Fabrication of Porous SiC; 6.4.2 GaN Growth on Hydrogen Polished Porous SiC; 6.4.3 GaN Growth on Chemical Mechanical Polished Porous SiC; Acknowledgements; References; 7 HVPE Growth of GaN on Porous SiC Substrates; 7.1 Introduction; 7.2 PSC Substrate Fabrication and Properties; 7.2.1 Formation of Various Types of SPSC Structure; 7.2.2 Dense Layer7.2.3 Monitoring of Anodization ProcessPorous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many moreSilicon carbideGallium nitrideSemiconductorsElectronic books.Silicon carbide.Gallium nitride.Semiconductors.621.3815/2621.38152Feenstra Randall M947049Wood Colin E. C27206MiAaPQMiAaPQMiAaPQBOOK9910145695203321Porous silicon carbide and gallium nitride2139735UNINA02162oam 2200589 450 991071524000332120210127091933.0(CKB)5470000002509625(OCoLC)1143006496(EXLCZ)99547000000250962520200304d1933 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierWind-tunnel research comparing lateral control devices, particularly at high angles of attackVIIIStraight and skewed ailerons on wings with rounded tips /by Fred E. Weick and Joseph A. ShortalWashington, [D.C.] :National Advisory Committee for Aeronautics,1933.1 online resource (13 pages, 13 unnumbered pages) illustrationsTechnical note / National Advisory Committee for Aeronautics ;No. 445"February, 1933."No Federal Depository Library Program (FDLP) item number.Includes bibliographical references (page 13).Straight and skewed ailerons on wings with rounded tipsAileronsFlaps (Airplanes)AirplanesControl surfacesWind tunnel testingAileronsfastAirplanesControl surfacesfastFlaps (Airplanes)fastWind tunnel testingfastAilerons.Flaps (Airplanes)AirplanesControl surfaces.Wind tunnel testing.Ailerons.AirplanesControl surfaces.Flaps (Airplanes)Wind tunnel testing.Weick Fred E.1387817Shortal Joseph Adams1908-United States.National Advisory Committee for Aeronautics,TRAALTRAALOCLCOOCLCFGPOBOOK9910715240003321Wind-tunnel research comparing lateral control devices, particularly at high angles of attack3437993UNINA