02047oam 2200577I 450 991071391130332120201211083521.0(CKB)5470000002506554(OCoLC)761405616(OCoLC)995470000002506554(EXLCZ)99547000000250655420111115j196904 ua 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierAnnealing of 22-, 40-, and 158-MeV proton damage in n- and p-type silicon /by Marvin E. Beatty III and Gerald F. HillWashington, D.C. :National Aeronautics and Space Administration,April 1969.1 online resource (25 pages) illustrationsNASA technical note ;NASA TN D-5119"April 1969."Includes bibliographical references (page 11).Solar cellsMaterialsEffect of radiation onSolar cellsMaterialsDefectsExtraterrestrial radiationSiliconHeat treatmentExtraterrestrial radiationfastSiliconEffect of radiation onfastSiliconHeat treatmentfastSolar cellsMaterialsEffect of radiation on.Solar cellsMaterialsDefects.Extraterrestrial radiation.SiliconHeat treatment.Extraterrestrial radiation.SiliconEffect of radiation on.SiliconHeat treatment.Beatty Marvin E.1394464Hill Gerald F.United States.National Aeronautics and Space Administration,Langley Research Center.OCLCEOCLCEOCLCQOCLCFCOPGPOBOOK9910713911303321Annealing of 22-, 40-, and 158-MeV proton damage in n- and p-type silicon3451906UNINA