01484nam 2200421I 450 991071156580332120181102102252.0(CKB)5470000002484392(OCoLC)1060610414(EXLCZ)99547000000248439220181102j201810 ua 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierCryogenic parametric characterization of gallium nitride switches /Marcelo C. Gonzalez, Lee W. Kohlman, and Andrew J. TrunekCleveland, Ohio :National Aeronautics and Space Administration, Glenn Research Center,October 2018.1 online resource (iii, 26 pages) color illustrationsNASA/TP ;2018-219973"October 2018."Includes bibliographical references (page 26).Field effect transistorsnasatGallium nitridesnasatMetal oxide semiconductorsnasatField effect transistors.Gallium nitrides.Metal oxide semiconductors.Gonzalez Marcelo C.1412968Kohlman Lee W.Trunek Andrew J.NASA Glenn Research Center,GPOGPOBOOK9910711565803321Cryogenic parametric characterization of gallium nitride switches3508196UNINA