01496aam 2200397I 450 991071119120332120151030113009.0GOVPUB-C13-7c41f838eac8f197249a5b6405317d3a(CKB)5470000002480095(OCoLC)927169879(EXLCZ)99547000000248009520151030d1997 ua 0engrdacontentrdamediardacarrierSemiconductor measurement technology the results of an interlaboratory study of ellipsometric measurements of thin film silicon dioxide on silicon /Barbara J. Belzer, David L. BlackburnGaithersburg, MD :U.S. Dept. of Commerce, National Institute of Standards and Technology,1997.1 online resourceNIST special publication ;400-991997.Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.Title from PDF title page.Includes bibliographical references.Semiconductor measurement technology Belzer Barbara J1410394Belzer Barbara J1410394Blackburn David L1410395National Institute of Standards and Technology (U.S.)NBSNBSGPOBOOK9910711191203321Semiconductor measurement technology3533289UNINA