01562aam 2200409I 450 991071059070332120231117235049.0GOVPUB-C13-816035d34a70cf1c8553e463d2b4cfee(CKB)5470000002477386(OCoLC)947843700(EXLCZ)99547000000247738620160426d1984 ua 0engrdacontentrdamediardacarrierMeasurement techniques for high-power semiconductor materials and devices annual report, January 1, 1982 to March 31, 1983 /W. R. Thurber; J. R. Lowney; W. E. PhillipsGaithersburg, MD :U.S. Dept. of Commerce, National Institute of Standards and Technology,1984.1 online resourceNBSIR ;84-28381984.Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.Title from PDF title page.Includes bibliographical references.Measurement techniques for high-power semiconductor materials and devicesThurber W. Robert1390342Lowney J. R1390343Phillips W. E1390344Thurber W. Robert1390342United States.National Bureau of Standards.NBSNBSGPOBOOK9910710590703321Measurement techniques for high-power semiconductor materials and devices3442947UNINA