01590aam 2200409I 450 991071027330332120231117235116.0GOVPUB-C13-170e7036657a01bb8d7b4ecb5679b64c(CKB)5470000002476552(OCoLC)935499896(EXLCZ)99547000000247655220160121d1981 ua 0engrdacontentrdamediardacarrierMeasurement techniques for high power semiconductor materials and devices annual report, October 1, 1979 to September 30, 1980 /R. C. Larrabee; W. E. Phillips; W. R. ThurberGaithersburg, MD :U.S. Dept. of Commerce, National Institute of Standards and Technology,1981.1 online resourceNBSIR ;81-23251981.Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.Title from PDF title page.Includes bibliographical references.Measurement techniques for high power semiconductor materials and devicesLarrabee R. C(Ralph C.)1405238Larrabee R. C(Ralph C.)1405238Phillips W. E1390344Thurber W. Robert1390342United States.National Bureau of Standards.NBSNBSGPOBOOK9910710273303321Measurement techniques for high power semiconductor materials and devices3481314UNINA