01569aam 2200409I 450 991071025530332120231117235145.0GOVPUB-C13-f17c647f665d9be4ce74e5326def8499(CKB)5470000002476733(OCoLC)935501284(EXLCZ)99547000000247673320160121d1982 ua 0engrdacontentrdamediardacarrierMeasurement techniques for high power semiconductor materials and devices annual report, October 1, 1980 to December 31, 1981 /W. R. Thurber; W. E. Phillips; R. D. LarrabeeGaithersburg, MD :U.S. Dept. of Commerce, National Institute of Standards and Technology,1982.1 online resourceNBSIR ;82-25521982.Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.Title from PDF title page.Includes bibliographical references.Measurement techniques for high power semiconductor materials and devicesThurber W. Robert1390342Larrabee R. D1395132Phillips W. E1390344Thurber W. Robert1390342United States.National Bureau of Standards.NBSNBSGPOBOOK9910710255303321Measurement techniques for high power semiconductor materials and devices3538365UNINA