01510aam 2200397I 450 991071023200332120160309011335.0GOVPUB-C13-3bd336431a31b38dad2abeab3018ee8c(CKB)5470000002476969(OCoLC)944188024(EXLCZ)99547000000247696920160309d1980 ua 0engrdacontentrdamediardacarrierMeasurement techniques for high power semiconductor materials and devices annual report, October 1, 1978 to September 30, 1979 /F. F. Oettinger; R. D. LarrabeeGaithersburg, MD :U.S. Dept. of Commerce, National Institute of Standards and Technology,1980.1 online resourceNBSIR ;80-20611980.Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.Title from PDF title page.Includes bibliographical references.Measurement techniques for high power semiconductor materials and devices Oettinger F. F1386490Larrabee R. D1395132Oettinger F. F1386490United States.National Bureau of Standards.NBSNBSGPOBOOK9910710232003321Measurement techniques for high power semiconductor materials and devices3473636UNINA