01394aam 2200397I 450 991071010100332120151118015318.0GOVPUB-C13-a871a223be92b4bc58f246b19bd2b288(CKB)5470000002475262(OCoLC)929879609(EXLCZ)99547000000247526220151118d1973 ua 0engrdacontentrdamediardacarrierResistivity and carrier lifetime in gold-doped silicon /W. Robert Thurber; David C. Lewis; W. Murray BullisGaithersburg, MD :U.S. Dept. of Commerce, National Institute of Standards and Technology,1973.1 online resourceNBSIR ;73-1281973.Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.Title from PDF title page.Includes bibliographical references.Thurber W. Robert1390342Bullis W. Murray1387657Lewis David C142682Thurber W. Robert1390342United States.National Bureau of Standards.NBSNBSGPOBOOK9910710101003321Resistivity and carrier lifetime in gold-doped silicon3499809UNINA