01501nam 2200457 450 991070997450332120180824101048.0(CKB)5470000002474519(OCoLC)1049711998(EXLCZ)99547000000247451920180824j198201 ua 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierCharacterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation /D.S. WooMarshall Space Flight Center, AL :George C. Marshall Space Flight Center,January 1982.1 online resource (v, 12 pages, 1 unnumbered page) illustrationsNASA/CR ;161988"January 1982."Includes bibliographical reference (page 11).Computer aided designnasatCodingnasatIon implantationnasatMasksnasatElectron beamsnasatComputer aided design.Coding.Ion implantation.Masks.Electron beams.Woo D. S.1392910George C. Marshall Space Flight Center,Solid State Technology Center (RCA Corporation)GPOGPOBOOK9910709974503321Characterization of silicon-gate CMOS3448436UNINA