02150nam 2200541Ia 450 991070993900332120180711120936.0GOVPUB-C13-752d1bed8ba5e339a5dbbbe7614cc375(CKB)5470000002474878(OCoLC)123128229(OCoLC)995470000002474878(EXLCZ)99547000000247487820070416d2006 ua 0engurcn|||||||||txtrdacontentcrdamediacrrdacarrierImplementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects /A. Emre Yarimbiyik [and others][Gaithersburg, MD] :U.S. Dept. of Commerce, National Institute of Standards and Technology,[2006].1 online resource (21 unnumbered pages) illustrationsNISTIR ;7234"February 2006."Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.Title from page [1], viewed March 7, 2007.Includes bibliographical references.Nanoelectromechanical systemsThin filmsSize effectsComputer simulationNanoelectromechanical systemsfastNanoelectromechanical systems.Thin filmsSize effectsComputer simulation.Nanoelectromechanical systems.Allen Ricky1421995Blackburn David L1410395Schafft Harry A1388971Yarimbiyik A. Emre1421996Zaghloul M. E(Mona Elwakkad)1419255National Institute of Standards and Technology (U.S.).Semiconductor Electronics Division.NBSNBSOCLCQOCLCOOCLCQOCLCFBOOK9910709939003321Implementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects3544980UNINA