01388aam 2200385I 450 991070991030332120151118015317.0GOVPUB-C13-c89de5cbcf7c7bfbd55c648ac515c70d(CKB)5470000002475168(OCoLC)929879279(EXLCZ)99547000000247516820151118d1979 ua 0engrdacontentrdamediardacarrierDevelopment of hydrogen and hydroxyl contamination in thin silicon dioxide thermal films /Santos Mayo; William H. EvansGaithersburg, MD :U.S. Dept. of Commerce, National Institute of Standards and Technology,1979.1 online resourceNBSIR ;78-15581979.Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.Title from PDF title page.Includes bibliographical references.Mayo Santos1407760Evans William H1407761Mayo Santos1407760United States.National Bureau of Standards.NBSNBSGPOBOOK9910709910303321Development of hydrogen and hydroxyl contamination in thin silicon dioxide thermal films3490031UNINA