02042nam 2200541 450 991070737930332120160712143716.0(CKB)5470000002463722(OCoLC)953458740(EXLCZ)99547000000246372220160712j199606 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierElectronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors /Liang-Yu Chen [and seven others]Cleveland, Ohio :National Aeronautics and Space Administration, Lewis Research Center,June 1996.1 online resource (6 pages) illustrationsNASA technical memorandum ;107255Title from title screen (viewed July 11, 2016)."June 1996"--Report documentation page."Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, 1996.""Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.Includes bibliographical references (page 6).Gas detectorsnasatSchottky diodesnasatHydrocarbonsnasatHydrogennasatPalladiumnasatSilicon carbidesnasatHeatingnasatGas detectors.Schottky diodes.Hydrocarbons.Hydrogen.Palladium.Silicon carbides.Heating.Chen Liang Yu1406921Lewis Research Center,United States.National Aeronautics and Space Administration,GPOGPOBOOK9910707379303321Electronic and interfacial properties of Pd3487045UNINA