02268oam 2200553 450 991070619900332120170816120739.0(CKB)5470000002454432(OCoLC)858254049(EXLCZ)99547000000245443220130912j199812 ua 0engurbn||||a|a||txtrdacontentcrdamediacrrdacarrierImpact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass /Albert J. Juhasz, Roy C. Tew, and Gene E. SchwarzeCleveland, Ohio :National Aeronautics and Space Administration, Lewis Research Center,December 1998.1 online resource (6 pages) illustrationsNASA/TM ;1998-208826"December 1998.""Prepared for the Space Technology and Applications International Forum cosponsored by the Boeing Company, Lockheed Martin, National Aeronautics and Space Administration, U.S. Air Force, and the U.S. Department of Energy, Albuquerque, New Mexico, January 31-February 4, 1999.""Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.Includes bibliographical references (page 6).Operating temperaturenasatRadiation hardeningnasatSilicon carbidesnasatSpacecraft power suppliesnasatHeat radiatorsnasatRadiation effectsnasatOperating temperature.Radiation hardening.Silicon carbides.Spacecraft power supplies.Heat radiators.Radiation effects.Juhasz Albert J.1390072Tew Roy C.Schwarze Gene E.Lewis Research Center,OCLCEOCLCEOCLCOOCLCQGPOBOOK9910706199003321Impact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass3462746UNINA