00955nam0 2200253 450 00001847820081030120056.0089871404420081030d1998----km-y0itay50------baengUSy-------001yyAfternotes goes to graduate schoollectures on advanced numerical analysisG. W. Stewarta series of lectures on advanced numerical analysis presented at the University of Maryland at College Park and recorded after the factPhiladelphiaSIAMc1998XII, 245 p.25 cmAfternotes goes to graduate school33186Calcolo numerico519.420Analisi numerica applicataStewart,Gilbert W.62368ITUNIPARTHENOPE20081030RICAUNIMARC000018478M 519.4/85M 1401DSA2008Afternotes goes to graduate school33186UNIPARTHENOPE01849nam 2200517 450 991070587440332120170725143054.0(CKB)5470000002453671(OCoLC)994303469(EXLCZ)99547000000245367120170724d1990 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierElectron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP /Dragan M. Pantie [and four others]Cleveland, Ohio :National Aeronautics and Space Administration, Lewis Research Center,[1990].1 online resource (15 pages) illustrationsNASA technical memorandum ;102544"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.Includes bibliographical references (page 13).Capacitance-voltage characteristicsnasatElectron beamsnasatIndium phosphidesnasatIrradiationnasatPhosphorusnasatPlasmas (physics)nasatRadiation damagenasatVapor depositionnasatCapacitance-voltage characteristics.Electron beams.Indium phosphides.Irradiation.Phosphorus.Plasmas (physics)Radiation damage.Vapor deposition.Pantic Dragan M.1414978Lewis Research Center,GPOGPOBOOK9910705874403321Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP3515740UNINA