01849nam 2200517 450 991070587440332120170725143054.0(CKB)5470000002453671(OCoLC)994303469(EXLCZ)99547000000245367120170724d1990 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierElectron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP /Dragan M. Pantie [and four others]Cleveland, Ohio :National Aeronautics and Space Administration, Lewis Research Center,[1990].1 online resource (15 pages) illustrationsNASA technical memorandum ;102544"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.Includes bibliographical references (page 13).Capacitance-voltage characteristicsnasatElectron beamsnasatIndium phosphidesnasatIrradiationnasatPhosphorusnasatPlasmas (physics)nasatRadiation damagenasatVapor depositionnasatCapacitance-voltage characteristics.Electron beams.Indium phosphides.Irradiation.Phosphorus.Plasmas (physics)Radiation damage.Vapor deposition.Pantic Dragan M.1414978Lewis Research Center,GPOGPOBOOK9910705874403321Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP3515740UNINA