01745oam 2200481I 450 991070576510332120170619144447.0(CKB)5470000002452755(OCoLC)846209334(EXLCZ)99547000000245275520130602j199711 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierElectrodeposited CuInSe₂ thin film junctions /R.P. Raffaelle [and five others]Cleveland, Ohio :National Aeronautics and Space Administration, Lewis Research Center,November 1997.1 online resource (6 pages) illustrationsNASA/TM ;97-206322"November 1997.""Prepared for the 1997 Fall Meeting sponsored by the Materials Research Society, Boston, Massachusetts, December 1-5, 1997.""Performing organization: National Aeronautics and Space Administration Lewis Research Center"--Report documentation page.Includes bibliographical reference (page 6).Electrodeposited copper indium diselenide thin film junctionsCopper indium selenidesnasatThin filmsnasatElectrodepositionnasatCopper indium selenides.Thin films.Electrodeposition.Raffaelle R. P.1418321Lewis Research Center,OCLCEOCLCEOCLCQOCLCOOCLCQGPOBOOK9910705765103321Electrodeposited CuInSe₂ thin film junctions3529398UNINA