01556nam 2200469I 450 991070386760332120150710161929.0(CKB)5470000002435054(OCoLC)913602265(EXLCZ)99547000000243505420150710j198805 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrier20 GHz monolithic transmit modules /J.A. Higgins, principal investigatorThousand Oaks CA :Rockwell International Science Center,May 1988.1 online resource (viii, 80, 5 pages, 7 unnumbered pages) illustratedNASA CR ;182134Title from title screen (viewed on July 10, 2015)."May 1988."Includes bibliographical references (page 79).Field effect transistorsnasatPhase shift circuitsnasatPower amplifiersnasatGallium arsenidesnasatIon implantationnasatField effect transistors.Phase shift circuits.Power amplifiers.Gallium arsenides.Ion implantation.Higgins J. A.1417015Rockwell International.Science Center,Lewis Research Center,GPOGPOBOOK991070386760332120 GHz monolithic transmit modules3524068UNINA