01787nam 2200445Ia 450 991070329240332120110802142327.0(CKB)4330000001829027(OCoLC)744451982(EXLCZ)99433000000182902720110802d2011 ua 0engurcn|||||||||txtrdacontentcrdamediacrrdacarrierEpitaxial crystal silicon absorber layers and solar cells grown at 1.8 microns per minute[electronic resource] preprint /David C. Bobela ... [and others][Golden, Colo.] :National Renewable Energy Laboratory,[2011]1 online resource (4 pages) illustrations (some color)NREL/CP ;5200-50708Title from title screen (viewed on Aug. 2, 2011)."July 2011.""Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37) Seattle, Washington, June 19-24, 2011."Includes bibliographical references (page 4).Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute Solar cellsDesign and constructionEpitaxyThin filmsSolar cellsDesign and construction.Epitaxy.Thin films.Bobela David C1420545National Renewable Energy Laboratory (U.S.)IEEE Photovoltaic Specialists Conference(37th :2011 :Seattle, Wash.)GPOGPOBOOK9910703292403321Epitaxial crystal silicon absorber layers and solar cells grown at 1.8 microns per minute3538846UNINA