01805oam 2200433 a 450 991070328920332120110811101338.0(CKB)4330000002002181(OCoLC)746221293(EXLCZ)99433000000200218120110810d2011 ua 0engurcn|||||||||txtrdacontentcrdamediacrrdacarrierThickness effect of Al-doped ZnO window layer on damp heat stability of CuInGaSe2 solar cells[electronic resource] preprint /F.J. Pern ... [and others][Golden, CO] :National Renewable Energy Laboratory,[2011]1 online resource (6 pages) color illustrationsNREL/CP ;5200-50682Title from title screen (viewed August 10, 2011)."July 2011.""Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."Includes bibliographical references (page 6).Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells Photovoltaic cellsResearchSolar cellsDesign and constructionPhotovoltaic cellsResearch.Solar cellsDesign and construction.Pern F. J(Fu-Jann),1952-1382332National Renewable Energy Laboratory (U.S.)IEEE Photovoltaic Specialists Conference(37th :2011 :Seattle, Wash.)SOESOEGPOBOOK9910703289203321Thickness effect of Al-doped ZnO window layer on damp heat stability of CuInGaSe2 solar cells3464423UNINA03362nam 2200649Ia 450 991078321800332120230617015348.01-281-34762-09786611347628981-256-236-2(CKB)1000000000033287(EBL)227133(OCoLC)475932992(SSID)ssj0000160686(PQKBManifestationID)11183374(PQKBTitleCode)TC0000160686(PQKBWorkID)10190373(PQKB)10394725(MiAaPQ)EBC227133(WSP)00005539(Au-PeEL)EBL227133(CaPaEBR)ebr10078535(CaONFJC)MIL134762(EXLCZ)99100000000003328720040826d2004 uy 0engur|n|---|||||txtccrGaN-based materials and devices[electronic resource] growth, fabrication, characterization and performance /editors, M.S. Shur, R.F. Davis33th ed.Singapore ;River Edge, N.J. World Scientificc20041 online resource (295 p.)Selected topics in electronics and systems ;v. 33Description based upon print version of record.981-238-844-3 Includes bibliographical references.Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) - Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AINGeneration-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer FusionThe unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.Selected topics in electronics and systems ;v. 33.Gallium nitrideSemiconductorsGallium nitride.Semiconductors.537.6223621.38152Shur Michael770441Davis Robert F(Robert Foster),1942-20241MiAaPQMiAaPQMiAaPQBOOK9910783218003321GaN-based materials and devices3679873UNINA