02016nam 2200565Ia 450 991070224930332120121107090327.0(CKB)5470000002425656(OCoLC)816311040(EXLCZ)99547000000242565620121107d2012 ua 0engurmn|||||||||txtrdacontentcrdamediacrrdacarrierTransmission electron microscopy (TEM) sample preparation of Si[subscript 1-x]Ge[subscript x] in c-plane sapphire substrate[electronic resource] /Hyun Jung Kim ... [and others]Hampton, Va. :National Aeronautics and Space Administration, Langley Research Center,[2012]1 online resource (ix, 29 pages) illustrations (some color)NASA/TM ;2012-217597Title from title screen (viewed on Nov. 7, 2012)."August 2012."Includes bibliographical references (page 29).Transmission electron microscopy Ion beamsnasatSapphirenasatTransmission electron microscopynasatX ray diffractionnasatSingle crystalsnasatRhombohedronsnasatGermaniumnasatDensity measurementnasatCrystal structurenasatIon beams.Sapphire.Transmission electron microscopy.X ray diffraction.Single crystals.Rhombohedrons.Germanium.Density measurement.Crystal structure.Kim Hyŏn-jŏng1403869Langley Research Center.GPOGPOBOOK9910702249303321Transmission electron microscopy (TEM) sample preparation of SiGesubscript x in c-plane sapphire substrate3514720UNINA