00860nam0-22003011i-450-9900009810104033210-471-19895-1000098101FED01000098101(Aleph)000098101FED0100009810120000920d1973----km-y0itay50------baengStatistical and Data Analysis in GeologyJohn C. Daviswith Fortran Programs by Robert J. SampsonNew YorkJohn Wiley1973ProbabilitàStatistica519Davis,John C.<1938- >46101Sampson,Robert J.ITUNINARICAUNIMARCBK99000098101040332118-20212707FI1FI1Statistical and Data Analysis in Geology353379UNINAING0101671oam 2200433 a 450 991070210620332120121009115052.0(CKB)5470000002425081(OCoLC)812275777(EXLCZ)99547000000242508120121009d1983 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierSilicon carbide, a high temperature semiconductor[electronic resource] /J. Anthony PowellCleveland, Ohio :National Aeronautics and Space Administration, Lewis Research Center,[1983]1 online resource (5 pages) illustrationsNASA technical memorandum ;83514Title from title screen (viewed Oct. 9, 2012).Prepared for the Cleveland Electronic Conference (CECON '83) sponsored by the Institute of Electrical and Electrotics Engineers, Inc. Cleveland, Ohio, October 4-6, 1983.Includes bibliographical references (page 5).High temperature environmentsnasatSemiconductor devicesnasatSilicon carbidesnasatHigh temperature environments.Semiconductor devices.Silicon carbides.Powell J. Anthony1422358Lewis Research Center.Cleveland Electrical/Electronics Conference and Exposition(1983)GPOGPOGPOBOOK9910702106203321Silicon carbide, a high temperature semiconductor3546434UNINA