01563oam 2200433Ia 450 991069933930332120230902162202.0(CKB)5470000002402524(OCoLC)227908497(EXLCZ)99547000000240252420080513d2006 ua 0engurmn|||||||||txtrdacontentcrdamediacrrdacarrierPulsed capacitance measurement of silicon carbide (SiC) Schottky diode and SiC metal oxide semiconductor[electronic resource] /by Timothy E. GriffinAdelphi, MD :Army Research Laboratory,[2006]1 online resource (vi, 22 pages) illustrationsARL-TR ;3993Title from PDF title screen (ARL, viewed Mar. 23, 2010)."November 2006."ARL-TR (Aberdeen Proving Ground, Md.) ;3993.Pulsed capacitance measurement of silicon carbide Pulsed power systemsDiodes, Schottky-barrierMetal oxide semiconductorsPulsed power systems.Diodes, Schottky-barrier.Metal oxide semiconductors.Griffin Timothy E1391748U.S. Army Research Laboratory.DTICEDTICEGPOBOOK9910699339303321Pulsed capacitance measurement of silicon carbide (SiC) Schottky diode and SiC metal oxide semiconductor3471624UNINA