01652nam 2200481 a 450 991069931430332120230902161720.0(CKB)5470000002402777(OCoLC)671240632(EXLCZ)99547000000240277720101020d2006 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierSwitching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C[electronic resource] /Janis M. NiedraCleveland, Ohio :National Aeronautics and Space Administration, Glenn Research Center,[2006]1 online resource (6 pages) illustrationsNASA/CR- ;2006-214257Title from title screen (viewed on Oct. 20, 2010)."November 2006."NASA contractor report ;NASA CR-214257.Junction transistorsnasatHigh temperaturenasatBipolar transistorsnasatSwitchingnasatStatic loadsnasatElectric potentialnasatJunction transistors.High temperature.Bipolar transistors.Switching.Static loads.Electric potential.Niedra Janis M1389258NASA Glenn Research Center.GPOGPOBOOK9910699314303321Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C3541581UNINA