02520oam 2200517Ia 450 991069870140332120120625140044.0(CKB)4330000001805271(OCoLC)727355702(EXLCZ)99433000000180527120100304j20080501 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierDesign of Shallow p-type Dopants in ZnO (Presentation)[electronic resource] /Su-Huai Wei, J. Li, and Y. Yan[Place of publication not identified] Washington, D.C. United States. Dept. of Energy Oak Ridge, Tenn. distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy20081 online resource (32 pages) color illustrationsNREL/PR ;520-43248Published through the Information Bridge: DOE Scientific and Technical Information."May 2008."Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.National Renewable Energy Laboratory (NREL), Golden, CO.ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.Design of Shallow p-type Dopants in ZnO Semiconductor dopingDoped semiconductorsCrystalsDefectsSemiconductor doping.Doped semiconductors.CrystalsDefects.Wei Su-Huai1413284Li J1418227Yan Yanfa1418228United States.Department of Energy.National Renewable Energy Laboratory (U.S.)United States.Department of Energy.Office of Scientific and Technical Information.IEEE Photovoltaic Specialists Conference(33rd :2008 :San Diego, Calif.)DOXDOXGPOBOOK9910698701403321Design of Shallow p-type Dopants in ZnO (Presentation)3529035UNINA