01553nam 2200397I 450 991069862880332120150929132231.0(CKB)5470000002436359(OCoLC)922543204(EXLCZ)99547000000243635920150929j201407 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierA study on reactive ion etching of barium strontium titanate films using mixtures of argon (Ar), carbon tetrafluoride (CF4), and sulfur hexafluoride (SF6) /Samuel G. Hirsch [and four others]Aberdeen Proving Ground, MD :Army Research Laboratory,July 2014.1 online resource (iv, 7 pages) illustrationsARL-TR ;6979Title from title screen (viewed Sept. 29, 2015)."July 2014."Includes bibliographical references.Study on reactive ion etching of barium strontium titanate films using mixtures of argon SemiconductorsEtchingVaractorsSemiconductorsEtching.Varactors.Hirsch Samuel G.1406675U.S. Army Research Laboratory,GPOGPOBOOK9910698628803321A study on reactive ion etching of barium strontium titanate films using mixtures of argon (Ar), carbon tetrafluoride (CF4), and sulfur hexafluoride (SF6)3486249UNINA