01470nam 2200409Ia 450 991069819420332120090305160046.0(CKB)5470000002395067(OCoLC)312494828(EXLCZ)99547000000239506720090305d2007 ua 0engurmn|||||||||txtrdacontentcrdamediacrrdacarrierGaAs high breakdown voltage front and back side processed Schottky detectors for x-ray detection[electronic resource] /Fred Semendy ... [and others]Adelphi, MD :Army Research Laboratory,[2007]iv, 13 pages digital, PDF fileARL-TR ;4308Title from title screen (viewed March 5, 2009)."November 2007."Includes bibliographical references (pages 10-11).SemiconductorsSilicon carbideElectric propertiesGallium nitrideElectric propertiesSemiconductors.Silicon carbideElectric properties.Gallium nitrideElectric properties.Semendy Fred1386303U.S. Army Research Laboratory.GPOGPOBOOK9910698194203321GaAs high breakdown voltage front and back side processed Schottky detectors for x-ray detection3438190UNINA