01860nam 2200445Ia 450 991069806260332120090424140144.0(CKB)5470000002394376(OCoLC)310979413(EXLCZ)99547000000239437620090226d1999 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierEffect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane (Dow-Corning 704) precursor on the properties of silicon containing diamond-like carbon (Si-DLC) coatings synthesized by ion-beam-assisted deposition (IBAD)[electronic resource] /by C. G. Fountzoulas ... [and others]Aberdeen Proving Ground, MD :Army Research Laboratory,[1999]viii, 14 pages digital, PDF fileARL-TR ;1942Title from title screen (viewed Feb. 26, 2009)."May 1999."Includes bibliographical references (page 9).Effect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane Surfaces (Technology)SiliconIon implantationChemical bondsSurfaces (Technology)Silicon.Ion implantation.Chemical bonds.Fountzoulas C. G(Constantine G.)1412005U.S. Army Research Laboratory.GPOGPOBOOK9910698062603321Effect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane (Dow-Corning 704) precursor on the properties of silicon containing diamond-like carbon (Si-DLC) coatings synthesized by ion-beam-assisted deposition (IBAD)3539801UNINA