01404nam 2200409Ia 450 991069768290332120090226143328.0(CKB)5470000002390130(OCoLC)310979505(EXLCZ)99547000000239013020090226d1999 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierBand-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor[electronic resource] /W. D. Sun ... [and others]Adelphi, MD :Army Research Laboratory,[1999]iii, 13 pages digital, PDF fileARL-TR ;1933Title from title screen (viewed Feb. 26, 2009)."May 1999."Includes bibliographical references (page 7).Field-effect transistorsQuantum wellsPhotoluminescenceField-effect transistors.Quantum wells.Photoluminescence.Sun W. D1409620U.S. Army Research Laboratory.GPOGPOBOOK9910697682903321Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor3496513UNINA