01739oam 2200445Ia 450 991069712620332120230902161943.0(CKB)5470000002385653(OCoLC)653261363(EXLCZ)99547000000238565320100806d2010 ka 0engurcn|||||||||txtrdacontentcrdamediacrrdacarrierCharacterization of multi temperature and multi RF chuck power grown silicon nitride films by PECVD and ICP vapor deposiiton[electronic resource] /F. Semedy ... [and others]Adelphi, MD :Army Resarch Laboratory,[2010]1 online resource (vi, 14 pages) color illustrationsARL-TR ;5105Title from PDF title screen (viewed on Aug. 6, 2010)."March 2010."Includes bibliographical references (page 11).ARL-TR (Aberdeen Proving Ground, Md.) ;5105.Characterization of multi temperature and multi RF chuck power grown silicon nitride films by plasma enhanced chemical vapor deposition and inductive coupled plasma vapor depositionSilicon nitrideChemical vapor depositionSilicon nitride.Chemical vapor deposition.Semendy Fred1386303U.S. Army Research Laboratory.GPOGPOGPOOCLCQGPOBOOK9910697126203321Characterization of multi temperature and multi RF chuck power grown silicon nitride films by PECVD and ICP vapor deposiiton3464660UNINA