01655oam 2200445Ka 450 991069637100332120080108134310.0(CKB)5470000002377119(OCoLC)173019081(EXLCZ)99547000000237711920070918d2006 ua 0engurmn|||||||||txtrdacontentcrdamediacrrdacarrier0.7-eV GaInAs junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) four-junction solar cell[electronic resource] preprint /D.J. Friedman ... [and others]Golden, CO :National Renewable Energy Laboratory,[2006]5 pages digital, PDF fileNREL/CP ;520-39913"Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006."Title from title screen (viewed January 8, 2008)."May 2006."0.7-eV GaInAs junction for a GaInP/GaAs/GaInAsSolar cellsDesign and constructionPhotovoltaic cellsResearchGallium arsenide semiconductorsSolar cellsDesign and construction.Photovoltaic cellsResearch.Gallium arsenide semiconductors.Friedman Daniel J(Daniel Joseph)25878National Renewable Energy Laboratory (U.S.)SOESOESOEGPOBOOK99106963710033210.7-eV GaInAs junction for a GaInP3478829UNINA