01219nam0 2200301 i 450 SUN000483920120316110326.36188-8114-937-0IT2000 509220020725d1999 |0itac50 baitaIT|||| |||||ˆI ‰contratti collegati nelle esperienze giuridiche italiana e franceseBruno MeoliNapoliEdizioni scientifiche italiane[1999]270 p.24 cm.Contratti collegatiFISUNC003003Contratti collegatiFranciaFISUNC003004NapoliSUNL000005346.4502Contratti e rappresentanza. Italia21Meoli, BrunoSUNV004395518434ESISUNV000952650ITSOL20181109RICASUN0004839UFFICIO DI BIBLIOTECA DEL DIPARTIMENTO DI GIURISPRUDENZA00 CONS XV.Eb.26 00 15953 UFFICIO DI BIBLIOTECA DEL DIPARTIMENTO DI GIURISPRUDENZA15953CONS XV.Eb.26paContratti collegati nelle esperienze giuridiche italiana e francese1438993UNICAMPANIA03740nam 2200817z- 450 9910619472303321202210253-0365-5262-6(CKB)5670000000391551(oapen)https://directory.doabooks.org/handle/20.500.12854/93245(oapen)doab93245(EXLCZ)99567000000039155120202210d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierSynthesis, Properties and Applications of Germanium ChalcogenidesMDPI - Multidisciplinary Digital Publishing Institute20221 online resource (154 p.)3-0365-5261-8 Germanium (Ge) chalcogenides are characterized by unique properties that make these materials interesting for a very wide range of applications from phase change memories to ovonic threshold switches and from photonics to thermoelectric and photovoltaic devices. In many cases, their physical properties can be finely tuned by doping or by changing the amount of Ge, which may therefore play a key role in determining the applications, performance, and even the reliability of these devices. In this book, we include 11 articles, mainly focusing on applications of Ge chalcogenides for non-volatile memories. Most of the papers have been produced with funding received from the European Union's Horizon 2020 Research and Innovation program under grant agreement n. 824957. In the Special Issue "BeforeHand: Boosting Performance of Phase Change Devices by Hetero- and Nanostructure Material Design", two contributions are related to the prototypical Ge2Sb2Te5 compound, which is the most studied composition, already integrated in many devices such as optical and electronic memories. Five articles focus on Ge-rich GeSbTe alloys, exploring the electrical and the structural properties, as well as the decomposition paths. Other contributions are focused on the effect of the interfaces and on nanowires.Industrial chemistry and chemical engineeringbicsscTechnology: general issuesbicssc amorphous phasecore-shellcrystallizationcrystallization temperaturedensity functional theoryDensity Functional TheoryEDX elemental chemical mappingelectrical propertieselectronic propertiesembedded electronic memoriesembedded memoryflexible substratesGe-rich alloysGe-rich GSTGe-rich GST alloysGe-Sb-TeGe-Sb-Te/Sb2Te3Ge2Sb2Te5germanium tellurideGGSThigh-throughput calculationsindium alloyingkineticsMOCVDnanowiresnitrogenoptical contrastPCMphase change materialsphase separationphase-change memorypulsed laser depositionRamansegregationsputteringstrainVLSIndustrial chemistry and chemical engineeringTechnology: general issuesPrivitera Stefania M. Sedt1315243Privitera Stefania M. SothBOOK9910619472303321Synthesis, Properties and Applications of Germanium Chalcogenides3032291UNINA