02597nam 2200361 450 991057178850332120230517115024.0(CKB)5600000000463488(NjHacI)995600000000463488(EXLCZ)99560000000046348820230517d2022 uy 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierPhilosophy of Cover Songs /P. D. MagnusCambridge, UK :Open Book Publishers,2022.1 online resource (145 pages) illustrations1-80064-426-4 Includes bibliographical references.Introduction / P.D. Magnus 1. What is a Cover? / P.D. Magnus 2. Kinds, Covers, and Kinds of Covers / P.D. Magnus Interlude: Cover Bands / P.D. Magnus 3. Listening to Covers / P.D. Magnus 4. The Semiotic Angle / P.D. Magnus Interlude: Torment and Interpolations / P.D. Magnus 5. Some Metaphysical Puzzles / P.D. Magnus 6. How a Song is Like Ducks / P.D. Magnus Epilogue / P.D. Magnus References / P.D. Magnus."Cover songs are a familiar feature of contemporary popular music. Musicians describe their own performances as covers, and audiences use the category to organize their listening and appreciation. However, until now philosophers have not had much to say about them. In A Philosophy of Cover Songs, P.D. Magnus demonstrates that philosophy provides a valuable toolbox for thinking about covers; in turn, the philosophy of cover songs illustrates some general points about philosophical method. Lucidly written, the book is divided into three parts: how to think about covers, appreciating covers, and the metaphysics of covers and songs. Along the way, it explores a range of issues raised by covers, from the question of what precisely constitutes a cover, to the history and taxonomy of the category, the various relationships that hold between songs, performances, and tracks, and the appreciation and evaluation of covers. This unique and engaging book will be of interest to those working in philosophy of art, philosophy of music, popular music studies, music history, and musicology, as well as to readers with a general interest in popular music, covers, and how we think about them."Cover versionsCover versions.781.6Magnus P. D.1278819NjHacINjHaclBOOK9910571788503321Philosophy of Cover Songs3013961UNINA05198nam 22006494a 450 991081014760332120240404142352.0981-277-806-3(CKB)1000000000400552(EBL)1679439(OCoLC)879074114(SSID)ssj0000217323(PQKBManifestationID)11191091(PQKBTitleCode)TC0000217323(PQKBWorkID)10203173(PQKB)10343425(MiAaPQ)EBC1679439(WSP)00004880(Au-PeEL)EBL1679439(CaPaEBR)ebr10201190(CaONFJC)MIL505435(EXLCZ)99100000000040055220020514d2002 uy 0engur|n|---|||||txtccrOxide reliability a summary of silicon oxide wearout, breakdown, and reliability /editor, D.J. Dumin1st ed.[River Edge, NJ] World Scientificc20021 online resource (281 p.)Selected topics in electronics and systems ;v. 23Description based upon print version of record.981-02-4842-3 Includes bibliographical references.CONTENTS ; Foreword ; Oxide Wearout, Breakdown, and Reliability; 1. Introduction ; 2. Oxide Breakdown ; 3. Oxide Leakage Currents ; 4. Oxide Trap Generation ; 5. Statistics of Wearout and Breakdown ; 6. Reliability ; 7. Summary ; Reliability of Flash Nonvolatile Memories ; 1. Introduction2. Implications to Scaling and Reliability 3. Dielectric Damage Caused by Program/Erase Cycling ; 4. Overerase Effects ; 5. Stress Induced Leakage Current and Post-Cycling Data Retention ; 6 Other Failure Mechanisms ; 7. Conclusions ; Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics1. Introduction 2. Time-Dependent Dielectric Breakdown ; 3. Chemistry and Physics of Amorphous SiO2 ; 4. Molecular Models for Dielectric Degradation ; 5. Electron and Hole Injection into SiO2 ; 6. Role of Hole Capture in TDDB ; 7. Complementary Model for TDDB8. Conditions Under Which the E and 1/E Models are Valid 9. Extention of the Complementary Model to Hyper-Thin SiO2; 10. Summary ; Breakdown Modes and Breakdown Statistics of Ultrathin SiO2 Gate Oxides; 1. Introduction ; 2. Breakdown related to the generation of oxide defects ; 3. Modeling the Breakdown Statistics4. Breakdown modes: Soft breakdown and Hard Breakdown 5. Breakdown effectiveness, energy dissipation and device failure; 6. Conclusions ; MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications ; 1. Introduction ; 2. Development of the Anode Hole Injection Model ; 3. Recent Developments4. Gross-Defect Related Breakdown and Burn-in Model This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field. <br><i>Contents: </i><ul><li>Oxide Wearout, Breakdown, and Reliability <i>(D J Dumin)</i></li><li>Reliability of Flash NonvolSelected topics in electronics and systems ;v. 23.Metal oxide semiconductorsReliabilitySilicon oxideDeteriorationMetal oxide semiconductorsReliability.Silicon oxideDeterioration.621.39/732Dumin D. J1720050MiAaPQMiAaPQMiAaPQBOOK9910810147603321Oxide reliability4118371UNINA01225nam0 22003131i 450 VAN0002248220240806100321.27508-03-98237-220040831d1990 |0itac50 baengGB|||| |||||Everyday understandingsocial and scientific implicationsedited by Gün R. Semin and Kenneth J. GergenLondonSage1990viii, 248 p.ill.23 cm. -001VAN000224812001 Inquiries in social construction210 LondonSage.GBLondonVANL000015306.4221GergenKenneth J.VANV015401SeminGün R.VANV018719SageVANV108387650Gergen, Kenneth JayGergen, Kenneth J.VANV015400Gergen, K. J.Gergen, Kenneth J.VANV107421ITSOL20240906RICABIBLIOTECA DEL DIPARTIMENTO DI PSICOLOGIAIT-CE0119VAN16VAN00022482BIBLIOTECA DEL DIPARTIMENTO DI PSICOLOGIA16CONS INGL 38 16LET3490 20040831 Everyday understanding710538UNICAMPANIA