00819nam0-22002651i-450-990003937350403321000393735FED01000393735(Aleph)000393735FED0100039373520030110d1991----km-y0itay50------baengGB<<The >>Postwar Evolution of Development ThinkingCharles P. Oman, Ganeshan WignarajaLondraThe Macmillan Accademic and Professional LTD1991275 pg.22 cmOman,P. Charles382914Wignaraja,Ganeshan<1962- >125749ITUNINARICAUNIMARCBK990003937350403321B1-B3.382880DECTSDECTSPostwar Evolution of Development Thinking511287UNINA01334nam--2200409---450-99000214005020331620050523132955.0000214005USA01000214005(ALEPH)000214005USA0100021400520041104h1981----km-y0itay0103----bagerDE||||||||001yyDeutsche FragenTexte zur jüngsten Vergangenheiteine Lese- u. Arbeitsbuch für den Deutschunterrichthrsg. und bearbeitet von Karl-Heinz Drochnerunter Mitarbeitet von Erika Drochner-KirchbergBerlinLangenscheidtcopyr. 1981207 p.21 cm20012001001-------2001Lingua tedescaStudi430DROCHNER,Karl HeinzDROCHNER-KIRCHBERG,ErikaITsalbcISBD990002140050203316IL t II 4219504 E.C.IL t IIVII.2.D. 74 (IL t II 42 bis)19505 E.C.IL t IIVII.2.D. 74a (IL t II 42 a)23907 E.C.IL t IIBKUMASIAV21020041104USA011203SIAV21020041104USA011204COPAT49020050523USA011329Deutsche Fragen620989UNISA00901nam0-2200229 --450 991057069990332120220610140816.020220610d2022----km-y0itay50------baitaITGuida essenziale al codice di prevenzione incendiaggiornata al d.m. 24 novembre 2021Progettazione antincendio valutazione dei rischi di incendio nei luoghi di lavoro Regole tecniche verticali Gestione della sicurezza antincendioClaudio GiacaloneSantarcangelo di Romagna (RN)Maggioli Editore2022485 p..ill. ;24 cmGiacalone,Claudio476712ITUNINARICAUNIMARCBK991057069990332113 44 154168 / 2022FINBC13 D 65 104169 / 2022FINBCFINBCGuida essenziale al codice di prevenzione incendi2867798UNINA04900nam 22005293 450 991100672410332120250604020324.097830364163283036416323(MiAaPQ)EBC31648669(Au-PeEL)EBL31648669(CKB)34825776300041(Exl-AI)31648669(OCoLC)1455117384(EXLCZ)993482577630004120240907d2024 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierFormation of Solid-State Structures1st ed.Zurich :Trans Tech Publications, Limited,2024.©2024.1 online resource (221 pages)Solid State Phenomena,1662-9779 ;Volume 3599783036406329 3036406328 Intro -- Formation of Solid-State Structures -- Preface -- Table of Contents -- Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation -- TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer -- Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems -- Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing -- Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping -- Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide -- Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC -- Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC -- Prediction of Contact Resistance of 4H-SiC by Machine Learning Using Optical Microscope Images after Laser Doping -- The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC -- Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing -- Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC -- Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization -- Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC -- Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing -- Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers -- Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget -- Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization -- Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC.Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs -- Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs -- Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions -- Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET -- Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power Devices -- Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface -- Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications -- High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2 -- Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry -- Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal -- Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask -- A Comparison between Different Post Grinding Processes on 4H-SiC Wafers -- Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC -- High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C) -- Keyword Index -- Author Index.Special topic volume with invited peer-reviewed papers only.Diffusion and defect dataPt. B,Solid state phenomena ;Volume 359SemiconductorsGenerated by AISolid state physicsGenerated by AISemiconductorsSolid state physicsRiccio Michele1822804Irace Andrea515880Breglio Giovanni1822805MiAaPQMiAaPQMiAaPQBOOK9911006724103321Formation of Solid-State Structures4389301UNINA