04374nam 2200757z- 450 991055714260332120210501(CKB)5400000000040632(oapen)https://directory.doabooks.org/handle/20.500.12854/68267(oapen)doab68267(EXLCZ)99540000000004063220202105d2021 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierHigh-Efficiency Crystalline Silicon Solar CellsBasel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20211 online resource (90 p.)3-03943-629-5 3-03943-630-9 This book is composed of 6 papers. The first paper reports a novel technique for the selective emitter formation by controlling the surface morphology of Si wafers. Selective emitter (SE) technology has attracted renewed attention in the Si solar cell industry to achieve an improved conversion efficiency of passivated-emitter rear-contact (PERC) cells. In the second paper, the temperature dependence of the parameters was compared through the PERC of the industrial-scale solar cells. As a result of their analysis, PERC cells showed different temperature dependence for the fill factor loss as temperatures rose. The third paper reports the effects of carrier selective front contact layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface. The results demonstrated the effects of band offset determined by band bending at the interface of the passivation layer and carrier selective front contact layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field-effect passivation. The fourth paper reports excimer laser annealing of hydrogenated amorphous silicon film for TOPCon solar cell application. This paper analyzes the crystallization of a-Si:H via excimer laser annealing (ELA) and compared this process with conventional thermal annealing. The fifth paper reports the contact mechanism between Ag-Al and Si and the change in contact resistance (Rc) by varying the firing profile. Rc was measured by varying the belt speed and peak temperature of the fast-firing furnace. The sixth paper reports a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model.History of engineering and technologybicsscAg/Al pasteAl:ZnO (AZO)amorphous hydrogenated silicon filmatomic force microscopy (AFM)carrier selective contactcontact formationcrystallinitydegradation degreedoping processdouble-diode modelexcimer laser annealingfailure ratefill factor loss analysisFourier-transform infrared (FTIR) spectroscopymetallizationN-doped Cu2O absorber layerN-type bifacial solar cellsnumerical electro-optical modelingp+ emitterparasitic resistancepassivationPERCrear emitter heterojunctionrecombination current densityscanning electron microscopy (SEM)selective emittersilicon tandem heterojunction solar cellsolar cellspectroscopic ellipsometry (SE)surface morphologytemperature dependencethermal annealingX-ray diffraction (XRD)History of engineering and technologyCho Eun-Cheledt1328657Lee Hae-SeokedtCho Eun-ChelothLee Hae-SeokothBOOK9910557142603321High-Efficiency Crystalline Silicon Solar Cells3038787UNINA04098nam 2200961z- 450 991056647920332120220506(CKB)5680000000037588(oapen)https://directory.doabooks.org/handle/20.500.12854/81235(oapen)doab81235(EXLCZ)99568000000003758820202205d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierGenetic Testing for Rare DiseasesBaselMDPI - Multidisciplinary Digital Publishing Institute20221 online resource (144 p.)3-0365-3728-7 3-0365-3727-9 Rare diseases, or orphan diseases, are those that individually affect a small number of patients, but taken together affect over 300 million people worldwide. They are characterized by their etiological, diagnostic and evolutionary complexity, important morbi-mortality, with high levels of disability that entail and hinder the development of a normal vital subject, not only in those who suffer from them, but also their families; therefore, a comprehensive social health approach is necessary to address this problem.About 80% of rare diseases have a genetic origin, mainly monogenic; thus, genetic testing is mandatory for the confirmation of clinical diagnostics and to ensure correct genetic counseling. Next-generation sequencing (NGS) has enabled a revolution in genetic diseases, specially in rare diseases. However, their complexity makes diagnoses difficult even with the advent of NGS.In this Special Issue, we present several examples of the complexity of genetic diagnosis for most of these diseases and the consequences that genetic testing implies for genetic counseling. There are examples of the genetic heterogeneity of hearing loss, some metabolic and lisosomal disorders, ataxia, Prader-Willi syndrome, and three comprehensive reviews on syndromic retinal dystrophies, the complexity of the molecular diagnosis of neuromuscular disorders, and the value of genetic counseling before and after a genetic test.Medicine and NursingbicsscACTG1Altaiansataxiabioinformaticschildclinical geneticsDFNA5DFNB4dystoniaearly onset ataxiafamilial hearing lossgenetic counsellinggenetic diagnosisgenetic testinggrowth hormone deficiencyGSDMEhearing lossHMG-CoA lyase deficiencyHMGCLHMGLDimprinting disorderinborn errors of metabolisminherited metabolic diseasesinherited retinal diseasesinsulin-like growth factor 1lysosomal disordersmosaicismmultiple diagnosesMYH9n/anetwork analysisneurodevelopmentneuromuscular diseasenext generation sequencingNGSnon-syndromic hearing lossphenotypepituitary microadenomaPrader-Willi syndromeprofessional recognitionrare diseasesrecombinant human growth hormoneretinaring chromosomesRussiasingle-exon CNVSLC26A4Southern SiberiasyndromeTurner syndromeTuvinianswhole exome sequencingMedicine and NursingMillán Joséedt1314113Millán JoséothBOOK9910566479203321Genetic Testing for Rare Diseases3031721UNINA