01903nam 2200565 a 450 991045873400332120200520144314.00-7844-7371-4(CKB)2560000000053229(EBL)3115397(SSID)ssj0000483911(PQKBManifestationID)12190533(PQKBTitleCode)TC0000483911(PQKBWorkID)10594164(PQKB)11480345(MiAaPQ)EBC3115397(Au-PeEL)EBL3115397(CaPaEBR)ebr10442088(OCoLC)871833691(EXLCZ)99256000000005322919931105d1993 uy 0engur|n|---|||||txtccrDispute avoidance and resolution for consulting engineers[electronic resource] /Richard K. AllenNew York, N.Y. ASCE Pressc19931 online resource (94 p.)Description based upon print version of record.0-87262-903-1 Includes bibliographical references (p. 81) and index.1. Introduction -- 2. Dispute avoidance -- 3. Dispute resolution -- 4. Conclusion.Civil engineering contractsUnited StatesConsulting engineersLegal status, laws, etcUnited StatesDispute resolution (Law)United StatesElectronic books.Civil engineering contractsConsulting engineersLegal status, laws, etc.Dispute resolution (Law)343.73/078624347.30378624Allen Richard K.1955-959503MiAaPQMiAaPQMiAaPQBOOK9910458734003321Dispute avoidance and resolution for consulting engineers2174195UNINA04185nam 2200889z- 450 991055761710332120220321(CKB)5400000000045230(oapen)https://directory.doabooks.org/handle/20.500.12854/79581(oapen)doab79581(EXLCZ)99540000000004523020202203d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierFlash Memory DevicesBaselMDPI - Multidisciplinary Digital Publishing Institute20221 online resource (144 p.)3-0365-3012-6 3-0365-3013-4 Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today "3D" means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement.Technology: general issuesbicssc3D flash memory3D NAND Flash3D NAND Flash memories3D NAND flash memoryaluminum oxideartificial neural networkdipoledisturbanceeffective work functionenduranceerase performanceerror correction codeFlash memory reliabilityflash signal processinggarbage collectionhigh-khigh-κinterfacial reactioninterferencemetal gateMHONOSn/aNAND flash memorynon-volatile memory (NVM)nonvolatile charge-trapping memoryNOR flash memoryperformance cliffprogramrandom telegraph noiserandomization schemeraw bit errorRBERread disturbreliabilityretention characteristicSiO2solid-state drivesstack engineeringsupport vector machinetail latencyTechnology Computer Aided Design (TCAD) simulationtemperaturetest platformwork functionTechnology: general issuesZambelli Cristianedt1287871Micheloni RinoedtZambelli CristianothMicheloni RinoothBOOK9910557617103321Flash Memory Devices3020506UNINA