04769nam 2201141z- 450 991055749870332120210501(CKB)5400000000042844(oapen)https://directory.doabooks.org/handle/20.500.12854/68646(oapen)doab68646(EXLCZ)99540000000004284420202105d2020 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierSiC based Miniaturized DevicesBasel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20201 online resource (170 p.)3-03936-010-8 3-03936-011-6 MEMS devices are found in many of today's electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.History of engineering and technologybicssc3C-SiC4H-SiC4H-SiC, epitaxial layer6H-SiCaluminum nitrideamorphous SiCBerkovich indenterbulge testbulk micromachiningcircular membranecleavage strengthcritical depth of cutcritical loaddeep level transient spectroscopy (DLTS)deformationdoped SiCelectrochemical characterizationelectrochemical etchingelectron beam induced current spectroscopy (EBIC)epitaxial growthFEMgrazing incidence X-ray diffraction (GIXRD)high-power impulse magnetron sputtering (HiPIMS)high-temperature convertersindentationmaterial removal mechanismsMEAmechanical propertiesMEMS devicesMESFETmicroelectrode arraymicrostrip detectorn-typen/ananoscratchingnegative gate-source voltage spikeneural implantneural interfaceneural probep-typePAEpoint defectspower electronicspower modulepulse height spectroscopy (PHS)radiation detectorRaman spectroscopyresidual stressRutherford backscattering spectrometry (RBS)Schottky barriersemiconductor radiation detectorSiCSiC power electronic devicessilicon carbidesimulationthermally stimulated current spectroscopy (TSC)thin filmvibrometryYoung's modulusHistory of engineering and technologySaddow Stephen EdwardAlquier DanielWang Jing1978 March-La Via FrancescoFraga Mariana AmorimSaddow Stephen E.Alquier DanielothWang JingothLa Via FrancescoothFraga MarianaothBOOK9910557498703321SiC based Miniaturized Devices3021405UNINA