06276nam 2201453z- 450 991055735170332120220111(CKB)5400000000042373(oapen)https://directory.doabooks.org/handle/20.500.12854/76339(oapen)doab76339(EXLCZ)99540000000004237320202201d2021 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierWide Bandgap Based DevicesDesign, Fabrication and ApplicationsBasel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20211 online resource (242 p.)3-0365-0566-0 3-0365-0567-9 Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as "ultra-wide bandgap" materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III-V, and other compound semiconductor devices and integrated circuits.Wide Bandgap Based Devices Technology: general issuesbicssc4H-SiCactive power filter (APF)AESA radarsAg sinter pasteAlGaN/GaNamorphous InGaZnOasymmetric multiple quantum wellsbarrier thicknessbreakdown voltage (BV)buffer trapping effectburied-channelcomposition-graded AlxGa1−xN electron blocking layer (EBL)copper metallizationcosolventdirect bonded copper (DBC) substratedistortionsdistributed feedback (DFB)double barrierelectrochromismelectron leakageelectron leakage currentflexible devicesgallium nitridegallium nitride (GaN)Gallium nitride (GaN) high-electron-mobility transistors (HEMTs)GaNGaN 5GGaN laser diodeGaN-based vertical-cavity surface-emitting laser (VCSEL)GaN-on-GaNgrooved-anode diodeHEMThierarchical nanostructureshigh electron mobility transistorshigh electron mobility transistors (HEMT)high-electron-mobility transistor (HEMT)high-electron-mobility transistorshigh-energy α-particle detectionIGBTInGaN laser diodesjammer systemlow voltagemetal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT)millimeter wavemorphologyn/anew radionitrogen-dopingnormally offnormally-off operationnumerical simulationON-state voltageoptical absorption lossoptical band gapoptimizationphoton extraction efficiencyphotonic emitterpolyol methodpower amplifierpower cycle testpower quality (PQ)power switching deviceproton irradiationrecessed gatereliabilityRF front-endschottky barrier diodesself-alignSiC micro-heater chipsidewall gratingssilver nanoringsilver nanowirespin coatingstabilitysurface gratingsterahertz Gunn diodethermal resistancethick depletion width detectorsthin-film transistortime-dependent dielectric breakdown (TDDB)transmittancetungsten trioxide filmturn-off lossultra-wide band gapvertical breakdown voltagevertical gate structurewide band gap semiconductorswide band-gap (WBG)wide bandgap semiconductorswide-bandgap semiconductorwidebandZnO nanorod/NiO nanosheetTechnology: general issuesMedjdoub Faridedt1296161Medjdoub FaridothBOOK9910557351703321Wide Bandgap Based Devices3023833UNINA